Simon Sze

Simon Min Sze, or Shi Min, was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.

Early life and education

Simon Min Sze was born in Nanjing, Jiangsu, and grew up in Taiwan. After graduating from National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963.

Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. He is well known for his work in semiconductor physics and technology, including his 1967 invention of the floating-gate transistor, now widely used in non-volatile semiconductor memory devices. He wrote and edited many books, including Physics of Semiconductor Devices, one of the most-cited texts in its field.

Simon Sze died on 6 November 2023, at the age of 87.

1977: IEEE Fellow
1991: J. J. Ebers Award
1994: Academician of Academia Sinica, Taiwan
1995: Member of National Academy of Engineering, United States
1998: Foreign Member of Chinese Academy of Engineering, China
2010: Tenured Chair Professor, National Chiao Tung University, Taiwan
2014: Honorary Chair Professor, National Taiwan University of Science and Technology, Taiwan
2017: IEEE Celebrated Member
2021: The Future Science Prize, China
2022: Asian Scientist 100, ''Asian Scientist''