List of semiconductor fabrication plants

Semiconductor fabrication plants are factories where integrated circuits, also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers that design and manufacture ICs in-house and may also manufacture designs from design-only, or by pure play foundries that manufacture designs from fabless companies and do not design their own ICs. Some pure play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.

Glossary of terms

Wafer size – largest wafer diameter that a facility is capable of processing.
Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants

Operating fabs include foundries from TSMC, GlobalFoundries, Silex Microsystems, Tower Semiconductor, Advanced Micro Foundry, VTT, SilTerra and IHP Microelectronics amongst others.

Company	Plant name	Plant location	Plant cost	Started production	Wafer size	Process technology node	Production capacity	Technology / products	-
STMicroelectronics		France, Crolles		2003	200, 300	28, 55, 65		Foundry, SiGe BiCMOS, FD-SOI	-
STMicroelectronics	AG200, AG300	Italy, Agrate Brianza			200, 300			Foundry, MEMS	-
nLIGHT		United States, Washington, Vancouver		2001				Laser diodes	-
Safran Sensing Technologies Switzerland		Switzerland, Yverdon-les-Bains			150			Foundry, MEMS	-
Pure Wafer		United States, Arizona, Prescott						Foundry	-
EM Microelectronic		Switzerland, La Tène, Neuchâtel		1975		180, 110		Foundry, microcontrollers, ASIC, RFID, smart cards	-
UMC – He Jian	Fab 8N	China, Suzhou	0.750, 1.2, +0.5	2003, May	200	4000–1000, 500, 350, 250, 180, 110	77,000	Foundry	-
UMC	Fab 6A	Taiwan, Hsinchu	0.35	1989	150	450	31,000	Foundry	-
UMC	Fab 8AB	Taiwan, Hsinchu	1	1995	200	250	67,000	Foundry	-
UMC	Fab 8C	Taiwan, Hsinchu	1	1998	200	350–110	37,000	Foundry	-
UMC	Fab 8D	Taiwan, Hsinchu	1.5	2000	200	90	31,000	Foundry	-
UMC	Fab 8E	Taiwan, Hsinchu	0.96	1998	200	180	37,000	Foundry	-
UMC	Fab 8F	Taiwan, Hsinchu	1.5	2000	200	150	40,000	Foundry	-
UMC	Fab 8S	Taiwan, Hsinchu	0.8	2004	200	350–250	31,000	Foundry	-
UMC	Fab 12A	Taiwan, Tainan	4.65, 4.1, 6.6, 7.3	2001, 2010, 2014, 2017	300	28, 14	87,000	Foundry	-
UMC	Fab 12i	Singapore	3.7	2004	300	130–40	53,000	Foundry	-
UMC – United Semiconductor	Fab 12X	China, Xiamen	6.2	2016	300	55–28	19,000-	Foundry	-
UMC – USJC	Fab 12M	Japan, Mie Prefecture		1974	150, 200, 300	90–40	33,000	Foundry	-
Texas Instruments	Miho	Japan, Ibaraki, Miho			200	[350 Nanometre\|nm process\|350], 250	40,000	Analog, DLP	-
Texas Instruments	Aizu	Japan, Fukushima, Aizuwakamatsu			200			Analog	-
Texas Instruments	MFAB	United States, Maine, South Portland	0.932	1997	200	350, 250, 180		Analog	-
Texas Instruments	LFAB	United States, Utah, Lehi	1.3		300	65–45	70,000	Analog, mixed signal, logic ,	-
Texas Instruments	RFAB1	United States, Texas, Richardson		2009	300	250, 180	20,000	Analog	-
Texas Instruments	RFAB2	United States, Texas, Richardson		2022	300			Analog	-
Texas Instruments	DMOS5	United States, Texas, Dallas		1984	200	250, 180		Analog, DLP	-
Texas Instruments	DMOS6	United States, Texas, Dallas		2000	300	130–45	22,000	Logic, Analog	-
Texas Instruments	DFAB	United States, Texas, Dallas		1966	150, 200			Mixed Signal, Analog	-
Texas Instruments	SFAB	United States, Texas, Sherman		1965	150			Analog	-
Texas Instruments	FFAB	Germany, Bavaria, Freising			200	1000, 180	37,500	Analog	-
Texas Instruments	CFAB	China, Chengdu			200		30,000	Analog	-
Tsinghua Unigroup		China, Nanjing	10, 30	Planned	300		100,000	3D NAND	-
Tsinghua Unigroup – XMC	Fab 1	China, Wuhan	1.9	2008	300	90, 65, 60, 50, 45, 40, 32	30,000	Foundry,	-
Tsinghua Unigroup – Yangtze Memory Technologies – XMC	Fab 2	China, Wuhan	24	2018	300	20	200,000	3D NAND	-
ChangXin Memory –	Fab 1	China, Hefei	8	2019	300	19	20,000–40,000	DRAM	-
SMIC	S1 Mega Fab	China, Shanghai			200	350–90	115,000	Foundry	-
SMIC	S2	China, Shanghai			300	45/40–32/28	20,000	Foundry	-
SMIC – SMSC	SN1	China, Shanghai	10	2020	300	14	70,000	Foundry	-
SMIC	B1 Mega Fab	China, Beijing		2004	300	180–90/55	52,000	Foundry	-
SMIC	B2A	China, Beijing	3.59	2014	300	45/40–32/28	41,000	Foundry	-
SMIC	Fab 15	China, Shenzhen		2014	200	350–90	55,000	Foundry	-
SMIC	Fab 7	China, Tianjin		2004	200	350–90	60,000	Foundry	-
SMIC	Jingcheng	China, Beijing	7.7		300	28	100,000	Foundry	-
SMIC	Lingang	China, Shanghai	8.87		300	28	100,000	Foundry	-
SMIC	Shenzhen	China, Shenzhen	2.35		300	28	40,000	Foundry	-
SMIC	Xiqing	China, Tianjin	7.5		300	28	100,000	Foundry	-
Wuxi Xichanweixin	LF	Italy, Abruzzo, Avezzano		1995	200	180–90	40,000		-
Nanya	Fab 2	Taiwan, Linkou	0.8	2000	200	175	30,000	DRAM	-
Nanya	Fab 3A	Taiwan, New Taipei City	1.85	2018	300	70-20	34,000	DRAM	-
Nanya		Taiwan, New Taipei City	10.66		300	10	15,000–45,000	DRAM	-
	NANOLAB	Netherlands, Enschede						Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics	-
Micron	Fab 4	United States, Idaho, Boise			300			R&D	-
Micron	Fab 6	United States, Virginia, Manassas		1997	300	25	70,000	DRAM, NAND FLASH,	-
Micron	Fab 7	Singapore			300		60,000	NAND FLASH	-
Micron	Fab 10	Singapore	3	2011	300	25	140,000	NAND FLASH	-
Micron	Fab 11	Taiwan, Taoyuan			300	20 and under	125,000	DRAM	-
Micron	Fab 13	Singapore			200			NOR	-
Micron		Singapore			200			NOR Flash	-
Micron	Micron Semiconductor Asia	Singapore							-
Micron		China, Xi'an							-
Micron	Fab 15	Japan, Hiroshima			300	20 and under	100,000	DRAM	-
Micron	Fab 16	Taiwan, Taichung			300	30 and under	80,000	DRAM, FEOL	-
Micron	Micron Memory Taiwan	Taiwan, Taichung		?, 2018	300			DRAM, BEOL	-
Micron	A3	Taiwan, Taichung			300			DRAM	-
Intel	D1B	United States, Oregon, Hillsboro		1996	300	22, 14, 10		Microprocessors	-
Intel	D1C	United States, Oregon, Hillsboro		2001	300	22, 14, 10		Microprocessors	-
Intel	D1D	United States, Oregon, Hillsboro		2003	300	14, 10, 7		Microprocessors	-
Intel	D1X	United States, Oregon, Hillsboro		2013	300	14, 10, 7		Microprocessors	-
Intel	Fab 12	United States, Arizona, Chandler		1996	300	65, 22, 14		Microprocessors & chipsets	-
Intel	Fab 32	United States, Arizona, Chandler	3	2007	300	45			-
Intel	Fab 32	United States, Arizona, Chandler		2007	300	32, 22		Microprocessors	-
Intel	Fab 42	United States, Arizona, Chandler	10	2020	300	10, 7		Microprocessors	-
Intel	Fab 52, 62	United States, Arizona, Chandler	20	2024				Microprocessors	-
Intel	Fab 11x	United States, New Mexico, Rio Rancho		2002	300	45, 32		Microprocessors	-
Intel	Fab 18	Israel, Southern District, Kiryat Gat		1996	200, 300	180, 90, 65, 45		Microprocessors and chipsets,	-
Intel	Fab 10	Ireland, County Kildare, Leixlip		1994	300				-
Intel	Fab 14	Ireland, County Kildare, Leixlip		1998	300				-
Intel	Fab 24	Ireland, County Kildare, Leixlip		2004	300	90, 65, 14		Microprocessors, Chipsets and Comms	-
Intel	Fab 28	Israel, Southern District, Kiryat Gat		2008	300	45, 22, 10		Microprocessors	-
Intel	Fab 38	Israel, Southern District, Kiryat Gat			300			Microprocessors	-
Intel	Fab 68	China, Dalian	2.5	2010	300	65	30,000–52,000	Microprocessors, VNAND	-
Costa Rican Ministry of Innovation, Science, Technology and Telecommunications	Centro de Exelencia, Distrito Tecnologico T24	Costa Rica, San Jose, San Jose	0.5	Under Construction	300	20 and under		Research on Foundry, AI BEOL & microprocessors	-
Tower Semiconductor	Fab 9	United States, Texas, San Antonio		2003	200	180	28,000	Foundry, Al BEOL, Power, RF Analog	-
Tower Semiconductor	Fab 1	Israel, Northern District, Migdal HaEmek	0.235	1989, 1986	150	1000–350	14,000	Foundry, Planarized BEOL,, CMOS, CIS, Power,	-
Tower Semiconductor	Fab 2	Israel, Northern District, Migdal HaEmek	1.226	2003	200	180–130	51,000	Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power,, MEMS, RFCMOS	-
Tower Semiconductor	Fab 3, Newport Beach	United States, California, Newport Beach	0.165	1967, 1995	200	500-130	25,000	Foundry, Al BEOL, SiGe, EPI	-
Tower Semiconductor – TPSCo	Fab 5, Tonami	Japan, Tonami		1994	200	500–130		Foundry,, Power, Discrete, NVM, CCD	-
Tower Semiconductor – TPSCo	Fab 7, Uozu	Japan, Uozu		1984	300	65. 45		Foundry, CMOS, CIS, RF SOI,	-
Tower Semiconductor – TPSCo	Fab 6, Arai	Japan, Arai		1976	200	130–110		Foundry,, CIS, NVM,	-
Nuvoton	Fab2	Taiwan, Hsinchu			150	1000-350	45,000	Generic Logic, Mixed Signal,,,, Mask ROM,, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor	-
ISRO	SCL	India, Mohali		2006	200	180		MEMS, CMOS, CCD, N.S.	-
STAR-C	MEMS	India, Bangalore		1996	150	1000–500		MEMS	-
STAR-C	CMOS	India, Bangalore		1996	150	1000–500		CMOS	-
GAETEC	GaAs	India, Hyderabad		1996	150	700–500		MESFET	-
BAE Systems		United States, New Hampshire, Nashua		1985	100, 150	140, 100, 70, 50		MMIC, GaAs, GaN-on-SiC, foundry	-
Qorvo		United States, North Carolina, Greensboro			100,150	500	8,000	SAW filters, GaAs HBT,, GaN	-
Qorvo		United States, Texas, Richardson	0.5	1996	100, 150, 200	350, 250, 150, 90	8,000	DRAM, BAW filters,,, GaN-on-SiC	-
Qorvo		United States, Oregon, Hillsboro			100, 150	500		Power amps, GaAs	-
Apple	X3	United States, California, San Jose		?, 1997, 2015		600–90			-
Analog Devices	MaxFabNorth	United States, Oregon, Beaverton							-
Rohm	Shiga Factory	Japan			200	150		IGBT, MOSFET, MEMS	-
Rohm	Miyasaki	Japan				150		MEMS	-
Rohm	Building No.1	Japan		1961				Transistors	-
Rohm	Building No.2	Japan		1962				Transistors	-
Rohm	Building No.3	Japan		1962				Transistors	-
Rohm	Building No.4	Japan		1969				Transistors	-
Rohm	Chichibu Plant	Japan		1975				DRAM	-
Rohm	VLSI Laboratory No. 1	Japan		1977				VLSI	-
Rohm	VLSI Laboratory No. 2	Japan		1983					-
Rohm	VLSI Laboratory No. 3	Japan		1983				DRAM	-
Rohm		Thailand		1992					-
Rohm	ULSI Laboratory No. 1	Japan		1992		500		DRAM	-
Rohm	Kyoto	Japan, Kyoto			200			MEMS	-
Fuji Electric	Hokuriku	Japan, Toyama prefecture							-
Fuji Electric	Matsumoto	Japan, Nagano prefecture			100, 150	2000–1000	20,000	CMOS. BiCMOS, bipolar, ASICs, discrete	-
Fujitsu	Kawasaki	Japan, Kawasaki		1966					-
Fujitsu	Kumagaya Plant	Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801		1974					-
Fujitsu	Suzaka Plant	Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501							-
Dynex Semiconductor		Lincoln, United Kingdom		1956	101.6, 150			Power Semiconductors	-
Denso	Iwate Plant	Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593			125, 150, 200	1500–350	100,000	CMOS, MOS, bipolar	-
Denso	Denso Iwate	Japan, Iwate Prefecture, Kanegasaki-cho	0.088					Semiconductor wafers and sensors	-
Canon Inc.	Oita	Japan							-
Canon Inc.	Kanagawa	Japan							-
Canon Inc.	Ayase	Japan							-
Sharp Corporation	Fukuyama	Japan			125, 150, 200	1000, 800, 600	85,000	CMOS	-
Japan Semiconductor	Iwate	Japan							-
Japan Semiconductor	Oita	Japan							-
Japan Advanced Semiconductor Manufacturing, Inc	Kumamoto	Japan	20+	2024	300	40, 22/28, 12/16 and 6/7	100,000+		-
Kioxia	Yokkaichi Operations	Japan, Yokkaichi		1992			173,334	Flash Memory	-
Kioxia/SanDisk	Y5 Phase 1			2011				Flash	-
Kioxia/SanDisk	Y5 Phase 2	Japan, Mie		2011	300	15		Flash	-
Kioxia	Y3	Japan, Yokkaichi			300			NAND Memory	-
Kioxia	Y4	Japan, Yokkaichi		2007	300			NAND Memory	-
Kioxia	Kaga Toshiba	Japan, Ishikawa						Power semiconductor devices	-
Kioxia	Oita Operations	Japan, Kyushu							-
Kioxia	Y6	Japan, Yokkaichi	1.6, 1.7, 1.8	2018	300			BiCS FLASH™	-
Kioxia	Y6	Japan, Yokkaichi	1.6, 1.7, 1.8	Planned	300			BiCS FLASH™	-
Kioxia	Y7	Japan, Yokkaichi	4.6	Planned	300			BiCS FLASH™	-
Kioxia	Y2	Japan, Yokkaichi		1995				3D NAND	-
Kioxia	New Y2	Japan, Yokkaichi		2016, July 15	300			3D NAND	-
Kioxia	K1	Japan, Iwate Prefecture			300			3D NAND
MinebeaMitsumi	Rinkai Factory	Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319–1221						MEMS Foundry	-
MinebeaMitsumi	Haramachi Factory	Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041						Power semiconductors	-
Hitachi Energy	Lenzburg	Switzerland, Aargau, Lenzburg	0.140	2010	130, 150		18,750	High power semiconductors, diodes, IGBT, BiMOS	-
Mitsubishi Electric	Power Device Works, Kunamoto Site	Japan			100, 125, 150, 200	2000–400	122,000	Power semiconductors	-
Mitsubishi Electric	High frequency optical device manufacturing plant	Japan, Hyogo Prefecture			100, 125		30,000	High frequency semiconductor devices	-
Powerchip Semiconductor	Memory Foundry, Fab P1	Taiwan, Hsinchu	2.24	2002	300	90, 70, 22	80,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC	-
Powerchip Semiconductor	Fab P2	Taiwan, Hsinchu, Hsinchu Science Park	1.86	2005	300	90, 70, 22	80,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC	-
Powerchip Semiconductor	Fab P3	Taiwan, Hsinchu, Hsinchu Science Park			300	90, 70, 22	20,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC	-
SPIL	ProMOS Fab 4	Taiwan, Taichung	1.6		300	70		Advanced Packaging	-
Macronix	Fab 5	Taiwan, Hsinchu			300		50,000		-
Macronix	Fab 2	Taiwan			200		48,000		-
Hon Young Semiconductor	Fab 1				150	800-400	40,000	Foundry, SiC, Automotive MOSFETs, MEMS	-
Renesas	Naka Factory	Japan		2009	300	28			-
Renesas	Takasaki Factory	Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021							-
Renesas	Kawashiri Factory	Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861–4195							-
Renesas	Saijo Factory	Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501							-
Renesas – Intersil	Palm Bay	United States, Florida, Palm Bay							-
Bosch	Roseville fab, M-Line, TD-Line, K-Line	United States, California, Roseville		1992, 1985	200				-
TDK – Micronas	FREIBURG	Germany,							-
TDK	Tsuruoka Higashi				125				-
TDK – Tronics		United States, Texas, Addison							-
Silanna		Australia, New South Wales, Sydney	0.030	1965,1989	150				-
Silanna		Australia, New South Wales, Sydney			150	500, 250		RF CMOS, SOS, foundry	-
Murata Manufacturing	Nagano	Japan	0.100		Murata en France			SAW filters	-
Murata Manufacturing	Otsuki	Japan							-
Murata Manufacturing	Kanazawa	Japan	0.111					SAW filters	-
Murata Manufacturing	Sendai	Japan, Miyagi Prefecture	0.092					MEMS	-
Murata Manufacturing	Yamanashi	Japan, Yamanashi Prefecture							-
Murata Manufacturing	Yasu	Japan, Shiga Prefecture, Yasu							-
Murata Electronics (Finland)	Vantaa	Finland		2012, expanded 2019				3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.	-
Mitsumi Electric	Semiconductor Works #3	Japan, Atsugi Operation Base		2000					-
Mitsumi Electric		Japan, Atsugi Operation Base		1979					-
Sony	Kagoshima Technology Center	Japan, Kagoshima		1973	100, 125, 150	2000–500	110,000	Bipolar CCD, MOS, MMIC, SXRD	-
Sony	Oita Technology Center	Japan, Oita		2016				CMOS Image Sensor	-
Sony	Nagasaki Technology Center	Japan, Nagasaki		1987	150	1000-350	80,000	MOS LSI, CMOS Image Sensors, SXRD	-
Sony	Kumamoto Technology Center	Japan, Kumamoto		2001				CCD Image Sensors, H-LCD, SXRD	-
Sony	Shiroishi Zao Technology Center	Japan, Shiroishi		1969				Semiconductor Lasers	-
Sony	Sony Shiroishi Semiconductor Inc.	Japan, Miyagi						Semiconductor Lasers	-
Sony	Yamagata Technology Center	Japan, Yamagata		2014	100, 125, 150, 200	3000, 2000, 800		MOS, bipolar, CMOS Image Sensor, eDRAM	-
SK Hynix		China, Chongqing							-
SK Hynix		China, Chongqing							-
SK Hynix		South Korea, Cheongju, Chungcheongbuk-do						NAND Flash	-
SK Hynix		South Korea, Cheongju						NAND Flash	-
SK Hynix	HC1	China, Wuxi			300		100,000	DRAM	-
SK Hynix	HC2	China, Wuxi			300		70,000	DRAM	-
SK Hynix	M16	South Korea, Icheon	3.13	2021	300	10	15,000–20,000	DRAM	-
LG Innotek	Paju	South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842						LED Epi-wafer, Chip, Package	-
ON Semiconductor		United States, New York, East Fishkill	2.5,	2002	300	90–22, 14	12,000–15,000	Foundry,,, SiGe, SiPh	-
ON Semiconductor	Gresham	United States, Oregon, Gresham			200	110			-
ON Semiconductor		United States, Pennsylvania, Mountain Top		1960–1997	200	350			-
ON Semiconductor	Roznov	Czech Republic, Zlín, Rožnov pod Radhoštěm		1956	150, 200	1000	80,000	Si, SiC	-
ON Semiconductor	ISMF	Malaysia, Seremban			150	350	80,000	Discrete	-
ON Semiconductor	Aizu Wakamatsu Plant	Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502		1970	150, 200	2000-130		Memory, Logic	-
JS Foundry K.K.	Niigata	Japan, Niigata			125, 150	2000–600, 350	120,000	CMOS, bipolar, BiCMOS	-
LA Semiconductor	Pocatello	United States, Idaho, Pocatello		1997	200	350			-
Diodes Incorporated	SPFAB	United States, Maine, South Portland		1960–1997	200	350			-
Diodes Incorporated	OFAB	UK, England, Greater Manchester, Oldham			150				-
Diodes Incorporated		China			150	4000–1000			-
Lite-On Optoelectronics		China, Tianjin							-
Lite-On Optoelectronics		Thailand, Bangkok							-
Lite-On Optoelectronics		China, Jiangsu							-
Lite-On Semiconductor	Keelung Plant	Taiwan, Keelung		1990	100			Thyristor, DIscrete	-
Lite-On Semiconductor	Hsinchu Plant	Taiwan, Hsinchu		2005				Bipolar BCD, CMOS	-
Lite-On Semiconductor	Lite-On Semi	China, Jiangsu		2004	100			Discrete	-
Lite-On Semiconductor	Wuxi WMEC Plant	China, Jiangsu		2005				Discrete, Power, Optical ICs	-
Lite-On Semiconductor	Shanghai Plant	China, Shanghai		1993	76			Fab, Assembly	-
Trumpf		Germany, Baden-Württemberg, Ulm						VCSEL	-
Philips		Netherlands, North Brabant, Eindhoven			150, 200		30,000	R&D, MEMS	-
Newport Wafer Fab	FAB11	UK, Wales, Newport			200	700-180	32,000	Foundry, Compound Semiconductors, IC, MOSFET, IGBT	-
Nexperia	Hamburg site	Germany, Hamburg		1953	200		35,000	Small-signal and	-
Nexperia	Manchester	UK, England, Greater Manchester, Stockport		1987?	150, 200		24,000	GaN FETs, TrenchMOS MOSFETs	-
NXP Semiconductors	ICN8	Netherlands, Gelderland, Nijmegen			200		40,000+	SiGe	-
NXP Semiconductors - SSMC	SSMC	Singapore	1.7	2001	200	120	53,000	SiGe	-
NXP Semiconductors – Jilin Semiconductor		China, Jilin			130				-
NXP Semiconductors	Oak Hill Fab	United States, Texas, Austin	0.8	1991	200	250			-
NXP Semiconductors	Chandler Fab	United States, Arizona, Chandler	1.1 +0.1	1993	150, 200	180		GaN-on-SiC pHEMT	-
NXP Semiconductors	ATMC	United States, Texas, Austin		1995	200	90			-
AWSC		Taiwan, Tainan		1999	150		12,000	Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP	-
Skyworks Solutions		United States, California, Newbury Park			100, 150			Compound Semiconductors	-
Skyworks Solutions		United States, Massachusetts, Woburn			100, 150			RF/cellular components	-
Skyworks Solutions		Japan, Osaka						SAW, TC-SAW Filters	-
Skyworks Solutions		Japan, Kadoma						SAW, TC-SAW Filters	-
Skyworks Solutions		Singapore, Bedok South Road						SAW, TC-SAW Filters	-
Win Semiconductor	Fab A	Taiwan, Taoyuan City			150	2000–10		Foundry, GaAs	-
Win Semiconductor	Fab B	Taiwan, Taoyuan City			150	2000–10		Foundry, GaAs, GaN	-
Win Semiconductor	Fab C	Taiwan, Taoyuan	0.050, 0.178	2000, 2009	150			Foundry, GaAs	-
ams	FAB B	Austria, Styria, Unterpremstätten			200	350		Optoelectronics	-
ams Osram		Malaysia, Kulim, Kulim Hi-Tech Park	0.350, 1.18	2017, 2020	150			LEDs	-
ams Osram		Malaysia, Penang		2009	100			LEDs	-
ams Osram		Germany, Bavaria, Regensburg		2003, 2005				LEDs	-
Winbond	Memory Product Foundry	Taiwan, Taichung			300	46			-
Winbond	CTSP Site	Taiwan, No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881			300				-
Winbond				Planned	300				-
Vanguard International Semiconductor	Fab 1	Taiwan, Hsinchu	0.997	1994	200	500, 350, 250	55,000	Foundry, CMOS	-
Vanguard International Semiconductor	Fab 2	Taiwan, Hsinchu	0.965	1998	200		55,000	Foundry	-
Vanguard International Semiconductor Corporation	Fab 3E	Singapore	1.3		200	180	34,000	Foundry	-
TSMC	Fab 2	Taiwan, Hsinchu	0.735	1990	150	800, 600, 500	88,000	Foundry, CMOS	-
TSMC	Fab 3	Taiwan, Hsinchu	2	1995	200	500, 350, 250	100,000	Foundry, CMOS	-
TSMC	Fab 5	Taiwan, Hsinchu	1.4	1997	200	350, 250, 180	48,000	Foundry, CMOS	-
TSMC	Fab 6	Taiwan, Tainan	2.1	2000, January; 2001	200, 300	180–?	99,000	Foundry	-
TSMC	Fab 7	Taiwan			200	350, 250, 220, 180	33,000	Foundry DRAM, Logic	-
TSMC	Fab 8	Taiwan, Hsinchu	1.6	1998	200	250, 180	85,000	Foundry	-
TSMC				2000	200	250, 150	30,000	Foundry	-
TSMC China Company	Fab 10	China, Shanghai	1.3	2004	200		74,000	Foundry	-
TSMC	Fab 12	Taiwan, Hsinchu	5.2, 21.6	2001	300	150–28	77,500–123,800	Foundry	-
TSMC	Fab 12	Taiwan, Hsinchu	6	2009	300	20	40,000	Foundry	-
TSMC	Fab 12	Taiwan, Hsinchu	3.6	2011	300	20	6,800	Foundry	-
TSMC	Fab 12	Taiwan, Hsinchu	4.2	2013	300	16	25,000	Foundry	-
TSMC	Fab 14	Taiwan, Tainan	5.1	2002, 2004	300	20	82,500	Foundry	-
TSMC	Fab 14	Taiwan, Tainan			300	16	50,000+	Foundry	-
TSMC	Fab 14	Taiwan, Tainan	3.1	2008	300	16	55,000	Foundry	-
TSMC	Fab 14	Taiwan, Tainan	3.750	2011	300	16	45,500	Foundry	-
TSMC	Fab 14	Taiwan, Tainan	3.650	2013	300	16		Foundry	-
TSMC	Fab 14	Taiwan, Tainan	4.2	2014	300	16		Foundry	-
TSMC	Fab 14	Taiwan, Tainan	4.850	2015	300	16		Foundry	-
TSMC	Fab 15	Taiwan, Taichung	9.3	2011	300	20	100,000+	Foundry	-
TSMC	Fab 15	Taiwan, Taichung	3.125	2011	300		4,000	Foundry	-
TSMC	Fab 15	Taiwan, Taichung	3.150	2012	300			Foundry	-
TSMC	Fab 15	Taiwan, Taichung	3.750	2013	300			Foundry	-
TSMC	Fab 15	Taiwan, Taichung	3.800	2014	300			Foundry	-
TSMC	Fab 15	Taiwan, Taichung	9.020	2016	300		35,000	Foundry	-
TSMC	Fab 18	Taiwan, Southern Taiwan Science Park	17.08	2020	300	5	120,000	Foundry	-
TSMC	Fab 18	Taiwan, Southern Taiwan Science Park			300	3	120,000	Foundry	-
TSMC	Fab 21	United States, Arizona, Phoenix	12	Q4 2024	300	5 & 4	20,000	Foundry
TSMC	Fab 21	United States, Arizona, Phoenix	65	2H 2027, under construction		3		Foundry
TSMC	Fab 21	United States, Arizona, Phoenix	65	2029-2030, under construction		1.6 & 2		Foundry
Epistar	Fab F1	Taiwan, Longtan Science Park						LEDs	-
Epistar	Fab A1	Taiwan, Hsinchu Science Park						LEDs	-
Epistar	Fab N2	Taiwan, Hsinchu Science Park						LEDs	-
Epistar	Fab N8	Taiwan, Hsinchu Science Park						LEDs	-
Epistar	Fab N1	Taiwan, Hsinchu Science Park						LEDs	-
Epistar	Fab N3	Taiwan, Hsinchu Science Park						LEDs	-
Epistar	Fab N6	Taiwan, Chunan Science Park						LEDs	-
Epistar	Fab N9	Taiwan, Chunan Science Park						LEDs	-
Epistar	Fab H1	Taiwan, Central Taiwan Science Park						LEDs	-
Epistar	Fab S1	Taiwan, Tainan Science Park						LEDs	-
Epistar	Fab S3	Taiwan, Tainan Science Park						LEDs	-
Epistar		Taiwan, Hsin-Chu Science Park	0.080	2011, second half				LEDs	-
GCS		United States, California, Torrance		1999	100		6,400	Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs	-
Bosch		Germany, Baden-Württemberg, Reutlingen		1995	150			ASIC, analog, power, SiC	-
Bosch		Germany, Saxony, Dresden	1.0	2021	300	65			-
Bosch	WaferFab	Germany, Baden-Württemberg, Reutlingen	0.708	2010	200		30,000	ASIC, analog, power, MEMS	-
STMicroelectronics	AMK8	Singapore, Ang Mo Kio		1995	200				-
STMicroelectronics	AMJ9	Singapore, Ang Mo Kio		1984	150, 200		6" 14 kpcs/day, 8" 1.4 kpcs/day	Power-MOS/ IGBT/ bipolar/ CMOS	-
X-Fab	Erfurt	Germany, Thuringia, Erfurt		1985	200	1000-600	11200–	Foundry, InP	-
X-Fab	Dresden	Germany, Saxony, Dresden	0.095	1985	200	1000-350	6000–	Foundry, CMOS, GaN-on-Si	-
X-Fab	Itzehoe	Germany, Schleswig-Holstein, Itzehoe			200		13000–	Foundry, MEMS	-
X-Fab	Kuching	Malaysia, Kuching	1.89	2000	200	350-130	30,000–	Foundry	-
X-Fab	Lubbock	United States, Texas, Lubbock	0.197	1977	150, 200	1000-600	15000–	Foundry, SiC	-
X-Fab France SAS	ACL-AMF	France, Île-de-France, Corbeil-Essonnes		1991, 1964	200	350-110		Foundry, CMOS,	-
IXYS		Germany, Hesse, Lampertheim						IGBT	-
IXYS		UK, England, Wiltshire, Chippenham							-
IXYS		United States, Massachusetts							-
IXYS		United States, California							-
Samsung	V1-Line	South Korea, Hwaseong	6	2020, February 20	300	7		Foundry	-
Samsung	S5-Line	South Korea, Pyeongtaek			300			Foundry	-
Samsung	S4-Line	South Korea, Hwaseong			300			Foundry	-
Samsung	S3-Line	South Korea, Hwaseong	10.2, 16.2	2017	300	10	200,000	Foundry	-
Samsung	S1-Line	South Korea, Giheung	33	2005, 1983	300	65–7	62,000	Foundry, CMOS, FDSOI	-
Samsung	Line-6	South Korea, Giheung			100, 150, 200	1500–500, 180–65		Foundry, CMOS, BiCMOS	-
Samsung	S6-Line	United States, Texas, Taylor			300			Foundry	-
Samsung	S2-Line	United States, Texas, Austin	16	2011	300	65–11	92,000	Foundry, CMOS, FDSOI	-
Samsung	Pyeongtaek	South Korea, Pyeongtaek	14.7, 27	2017, July 6	300	14	450,000	V-NAND, DRAM	-
Samsung	Samsung China Semiconductor	China, Shaanxi Province						DDR Memory	-
Samsung	F1x1	China, Xian	2.3	2014	300	20	100,000	VNAND	-
Samsung	Giheung Campus	South Korea, Gyeonggi-do, Yongin						LEDs	-
Samsung	Hwasung Campus	South Korea, Gyeonggi-do, Hwaseong						LEDs	-
Samsung	Tianjin Samsung LED Co., Ltd.	China, Tianjin, Xiqing						LEDs	-
Seagate		United States, Minnesota, Minneapolis						Read/write heads,	-
Seagate		UK, Northern Ireland						Read/write heads	-
Broadcom Inc.		United States, Colorado, Fort Collins							-
Wolfspeed	Durham	United States, North Carolina, Durham						Compound Semiconductors, LEDs	-
Wolfspeed	Research Triangle Park	United States, North Carolina						GaN HEMT RF ICs	-
		Brazil, São Paulo, Atibaia		2006				Packaging	-
Infineon Technologies	Villach	Austria, Carinthia, Villach		1970	100, 150, 200, 300			MEMS, SiC, GaN	-
Infineon Technologies	Dresden	Germany, Saxony, Dresden	3	1994–2011	200, 300	90			-
Infineon Technologies	Kulim	Malaysia, Kulim Hi-Tech Park		2006	200, 300		50,000	Power Semiconductor, GaN, SiC	-
Infineon Technologies	Kulim 2	Malaysia, Kulim Hi-Tech Park		2015	200, 300		50,000	Power Semiconductor, GaN, SiC	-
Infineon Technologies	Kulim 3	Malaysia, Kulim Hi-Tech Park	8	2025	200			Power Semiconductor, GaN, SiC	-
Infineon Technologies	Regensburg	Germany, Bavaria, Regensburg		1959					-
Infineon Technologies	Cegled	Hungary, Pest, Cegléd							-
Infineon Technologies	Fab 25	United States, Texas, Austin	1.5	1995	200				-
D-Wave Systems	Superconducting Foundry							Quantum Processing Units (QPUs)	-
GlobalFoundries	Fab 1 Module 1	Germany, Saxony, Dresden	3.6	2005	300	45-22	35,000	Foundry, SOI, FDSOI	-
GlobalFoundries	Fab 1 Module 2	Germany, Saxony, Dresden	4.9	1999	300	45-22	25,000	Foundry, SOI	-
GlobalFoundries	Fab 1 Module 3	Germany, Saxony, Dresden	2.3	2011	300	45-22	6,000	Foundry, SOI	-
GlobalFoundries	Fab 2	Singapore	1.3	1995	200	600-350	56,000	Foundry, SOI	-
GlobalFoundries	Fab 3/5	Singapore	0.915, 1.2	1997, 1995	200	350-180	54,000	Foundry, SOI	-
GlobalFoundries	Fab 6	Singapore	1.4	2000	200,	180-110	45,000	Foundry, SOI	-
GlobalFoundries	Fab 7	Singapore	4.6	2005	300	130, 110, 90, 65, 40	50,000	Foundry,,	-
GlobalFoundries	Fab 8	United States, New York, Malta	4.6, 2.1,	2012, 2014	300	28, 22, 14, 12	60,000	Foundry, High-K Metal Gate,	-
GlobalFoundries	Fab 9	United States, Vermont, Essex Junction		1957	200	350-90	50,000	Foundry, SiGe, RF SOI, GaN	-
GlobalFoundries	Technology Development Center	United States, New York, Malta	1.5	2014					-
SUNY Poly CNSE	NanoFab 300 North	United States, New York, Albany	0.175, 0.050	2004, 2005	300	65, 45, 32, 22			-
SUNY Poly CNSE	NanoFab 200	United States, New York, Albany	0.016	1997	200				-
SUNY Poly CNSE	NanoFab Central	United States, New York, Albany	0.150	2009	300	22			-
Skorpios Technologies		United States, Texas, Austin	0.065	1989	200		10,000	MEMS, photonics, foundry	-
Opto Diode		United States, California, Camarillo						LED, Photodiode, PbS/PbSe Infrared Detectors	-
Optek Technology				1968	100, 150			GaAs, LEDs	-
II-VI								Semiconductor Lasers, Photodiodes	-
Infinera		United States, California, Sunnyvale							-
Rogue Valley Microdevices		United States, Oregon, Medford		2003	50.8–300			MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D	-
	Fab 1	United States, California, Goleta		2000	150, 200	350	20,000	Foundry: MEMS, Photonics, Sensors, Biochips	-
Sensera	uDev-1	United States, Massachusetts, Woburn		2014	150	700	1,000	MEMS, MicroDevice assembly	-
Rigetti Computing	Fab-1	United States, California, Fremont			130			Quantum Processors	-
	FAB 1,2,3	United States, Minnesota, Bloomington			200			BCD, HV, GMR	-
Orbit Semiconductor					100			CCD, CMOS	-
Entrepix		United States, Arizona, Tempe		2003					-
Technologies and Devices International		United States, Florida, Silver Springs		2002					-
Soraa Inc		United States, California							-
Soraa Laser Diode									-
Mirrorcle Technologies		United States, California, Richmond							-
HTE LABS	HTE LABS	United States, California, San Jose	0.005	2009	100, 150	4000–1000	1,000	Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com	-
		Brazil, Minas Gerais, Ribeirão das Neves		Planned					-
Unitec Blue		Argentina, Buenos Aires Province, Chascomús	0.3	2013				RFID, SIM, EMV	-
	Yuan-Li Plant	Taiwan, Miao-Li						LEDs	-
	Pan-Yu Plant	China						LEDs	-
	Tu-Cheng Plant	Taiwan, Taipei Country						LEDs	-
Optotech		Taiwan, Hsinchu						LEDs	-
Arima Optoelectronics		Taiwan, Hsinchu		1999					-
Episil Semiconductor		Taiwan, Hsinchu		1992, 1990, 1988					-
Episil Semiconductor		Taiwan, Hsinchu		1992, 1990, 1988					-
	NanChang Creative Sensor	China, Jiangxi		2007				Image Sensors	-
	Wuxi Creative Sensor	China, Jiangsu		2002					-
	Wuxi Creative Sensor	Taiwan, Taipei City		1998					-
	Headquarters Phase I	Taiwan, Hsinchu Science-based Industrial Park		2007, September				CMOS Image Sensors	-
Panjit		Taiwan, Kaohsiung	0.1	2003					-
Nanosystem Fabrication Facility		Hong Kong							-
GTA Semiconductor	Fab 2, Fab 3	China, Shanghai, Xuhui District			200	350, 180, 150	55333	HV Analog, Power	-
GTA Semiconductor	Fab 5, Fab 6	China, Shanghai, Pudong New Area	5.1	2020	150, 200, 300		115000		-
Shanghai Belling		China, Shanghai			150	1200		BiCMOS, CMOS	-
		China, Shenzhen, Longgang High-tech Industrial Park		2004	130			Power semiconductors, LED drivers,,	-
				1997	100			Transistors	-
CRMicro	Fab 1			1998	150		60,000	HV Analog, MEMS, Power, Analog, Foundry	-
CRMicro	Fab 2	China, Wuxi		2008	200	180, 130	40,000	HV Analog, Foundry	-
CRMicro	Fab 3			1995	200	130	20,000		-
CRMicro	Fab 5			2005			30,000		-
Nexchip	N1	China, Hefei			300	150-40	40,000	Display Drivers IC	-
Nexchip	N2	China, Hefei			300		40,000		-
Nexchip	N3	China, Hefei			300		40,000		-
Nexchip	N4	China, Hefei			300		40,000		-
Wandai	CQ	China, Chongqing			300		20,000		-
San'an Optoelectronics	Tianjin San'an Optoelectronics Co., Ltd.	China, Tianjin						LEDs	-
San'an Optoelectronics	Xiamen San'an Optoelectronics Technology Co., Ltd.	China, Xiamen						LEDs	-
San'an Optoelectronics	Xiamen San'an Optoelectronics Co., Ltd.	China, Xiamen						LEDs	-
San'an Optoelectronics	Wuhu Anrui Optoelectronics Co., Ltd.	China, Wuhu						LEDs	-
San'an Optoelectronics	Anrui San'an Optoelectronics Co., Ltd.	China, Wuhu						LEDs	-
San'an Optoelectronics	Luminus Summary	United States						LEDs	-
San'an Optoelectronics	Quanzhou San'an Semiconductor Technology Co., Ltd.	China, Nan'an						LEDs	-
Sanan IC	Xiamen Fab	China, Xiamen	0.00785	2014	150		30,000	SAW filters, Foundry, GaA, GaN, RF, Power	-
Sanan IC	Quanzhou Fab	China, Quanzhou	4.6	2017	150		8,000	SAW filters, Foundry, GaA, RF	-
Sanan IC	Changsha Fab	China, Changsha	2.3	2021	150		30,000	Foundry, GaN, SiC, Power	-
Hua Hong Semiconductor	HH Fab7	China, Wuxi			300	90-55	95,000	Foundry, eNVM, RF, Mixed Signal, Logic,,	-
Hua Hong Semiconductor	HH Fab1	China, Shanghai, Jinqiao			200	95	65,000	Foundry, eNVM, RF, Mixed Signal, Logic,,	-
Hua Hong Semiconductor	HH Fab2	China, Shanghai, Zhangjiang			200	180	60,000	Foundry, eNVM, RF, Mixed Signal, Logic,,	-
Hua Hong Semiconductor	HH Fab3	China, Shanghai, Zhangjiang			200	90	53,000	Foundry, eNVM, RF, Mixed Signal, Logic,,	-
Hua Hong Semiconductor	HH Fab5	China, Shanghai, Zhangjiang		2011	300	65/55-40	35,000	Foundry	-
Hua Hong Semiconductor	HH Fab6	China, Shanghai, Kangqiao		2018	300	28/22	40,000	Foundry	-
HuaLei Optoelectronic		China						LEDs	-
Sino King Technology		China, Hefei		2017				DRAM	-
APT Electronics		China, Guangzhou		2006					-
Aqualite		China, Guangzhou		2006					-
Aqualite		China, Wuhan		2008					-
Xiamen Jaysun Semiconductor Manufacturing	Fab 101	China, Xiamen	0.035	2011					-
Xiyue Electronics Technology	Fab 1	China, Xian	0.096	2007					-
	Fab 1	China, Fushun		2018	200		10,000 – 30,000	, MEMS Sensors IoT Motion Sensors	-
CanSemi	Phase I	China, Guangzhou	4	2019	300	180–90	20,000	Power, Analog, Power Discrete	-
CanSemi	Phase II	China, Guangzhou		2022	300	90-55	20,000		-
CanSemi	Phase III	China, Guangzhou	2.4	Planned	300	55-40	40,000	Automotive, IoT	-
SensFab		Singapore		1995					-
MIMOS Semiconductor		Malaysia, Kuala Lumpur	0.006, 0.135	1997, 2002					-
Silterra Malaysia	Fab1	Malaysia, Kedah, Kulim	1.6	2000	200	250, 200, 180–90	46,000	CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal	-
Pyongyang Semiconductor Factory	111 Factory	North Korea, Pyongyang		1980s		3000			-
DB HiTek	Fab 1	South Korea, Bucheon		1997				Foundry	-
DB HiTek	Fab 2	South Korea, Eumsung-Kun		2001				Foundry	-
DB HiTek	Fab 2 Module 2	South Korea, Eumsung-Kun						Foundry	-
Kodenshi AUK Group	Silicon FAB Line								-
Kodenshi AUK Group	Compound FAB Line								-
Kyocera								SAW devices	-
Seiko Instruments		China, Shanghai							-
Seiko Instruments		Japan, Akita							-
Seiko Instruments		Japan, Takatsuka							-
Epson	T wing	Japan, Sakata		1997	200	350-150	25,000		-
Epson	S wing	Japan, Sakata		1991	150	1200-350	20,000		-
Olympus Corporation	Nagano	Japan, Nagano Prefecture						MEMS	-
Olympus		Japan						MEMS	-
	Kawagoe Works	Japan, Saitama Prefecture, Fujimino City		1959	100, 150	4000, 400, 350		Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD,,, SAW Filters	-
		Japan, Saga Prefecture			100, 150	4000, 400, 350		Foundry, Bipolar, Mixed Signal, Analog,, BCD,,, SAW Filters	-
		Japan, Fukuoka Prefecture, Fukuoka City		2003	100, 150			Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs	-
		Japan, Nagano, Nagano City							-
		Japan, Nagano, Ueda City							-
Nichia	YOKOHAMA TECHNOLOGY CENTER	Japan, Kanagawa						LEDs	-
Nichia	SUWA TECHNOLOGY CENTER	Japan, Nagano						LEDs	-
Taiyo Yuden		Japan, Nagano						SAW devices	-
Taiyo Yuden		Japan, Ome						SAW devices	-
Silex Microsystems		Sweden, Stockholm County, Järfälla	0.009, 0.032	2003, 2009					-
Elmos Semiconductor		Germany, North Rhine-Westphalia, Dortmund		1984	200	800, 350	9000	HV-CMOS	-
United Monolithic Semiconductors		Germany, Baden-Württemberg, Ulm			100	700, 250, 150, 100		Foundry, FEOL, MMIC,, InGaP, GaN HEMT, MESFET, Schottky diode	-
United Monolithic Semiconductors		France, Île-de-France, Villebon-sur-Yvette			100			Foundry, BEOL	-
Innovative Ion Implant		France, Provence-Alpes-Côte d'Azur, Peynier			51–300				-
Innovative Ion Implant		UK, Scotland, Bathgate			51–300				-
		Netherlands, North Brabant, Eindhoven			50–100	50-10	2–10	MEMS	-
	Lancing	UK, England, West Sussex, Lancing						Detectors	-
	FlexLogic 001	UK, England, Durham	0.020	2018	200	600	4,000	Flexible Semiconductor / Foundry and IDM	-
	FlexLogic 002	UK, England, Durham	0.050	2023	300	600	15,000	Flexible Semiconductor / Foundry and IDM	-
	FlexLogic 003	UK, England, Durham	0.050	Planned 2025 on line	300	600	15,000	Flexible Semiconductor / Foundry and IDM	-
INEX Microtechnology		UK, England, Northumberland, Newcastle upon Tyne		2014	150			Foundry	-
CSTG		UK, Scotland, Glasgow		2003	76, 100			InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry	-
Photonix		UK, Scotland, Glasgow	0.011	2000					-
Integral		Belarus, Minsk		1963	100, 150, 200	2000, 1500, 350			-
VSP Mikron	WaferFab	Russia, Voronezh Oblast, Voronezh		1959	100, 150	900+	6,000	Bipolar, Power Semiconductors	-
Semikron	Nbg Fab	Germany, Nuremberg		1984	150	3500	70,000	Bipolar, Power Semiconductors	-
		Russia, Moscow, Zelenograd		2016	200	250-110	20,000		-
Angstrem	Liniya 100	Russia, Moscow, Zelenograd		1963	100	1200	500		-
Angstrem	Liniya 150	Russia, Moscow, Zelenograd		1963	150	600	6,000		-
Mikron Group	Mikron	Russia, Moscow, Zelenograd	0.4	2012	200 150 100	250-65 2000-1600	3,000 8,000 5,000		-
		Russia, Moscow	0.2	2016	300	90-55	4,000	BEOL	-
		Russia, Nizhny Novgorod Oblast, Nizhny Novgorod		2010	100–150	350-150		MEMS	-
NPP Istok		Russia, Moscow Oblast, Fryazino			150				-
		Russia, Tomsk Oblast, Tomsk		2015	100				-
		Russia, Bryansk Oblast, Bryansk		2019		500			-
		Russia, Voronezh Oblast, Voronezh		1992	200	350-65		SiC, GaN, TSV	-
		Russia, Novosibirsk Oblast, Novosibirsk		1956	100	250-180			-
Russian Space Systems		Russia, Moscow			76, 100, 150	1000			-
Ruselectronics	Svetlana-Rost	Russia, Saint Petersburg			50, 76, 100	1000, 800, 500, 200			-
	Svetlana-Rost	Russia, Novgorod Oblast, Veliky Novgorod			100	150			-
FBK – Fondazione Bruno Kessler	MNF	Italy, Trento		1990	500	150		Research Institute; prototype productions of silicon MEMS, silicon radiation sensors	-
CEITEC – Centro Nacional de Tecnologia Electrônica Avançada S.A		Brazil, Porto Alegre		2008		600		Research Institute; prototype production	-
HT Micron (Hana Micron)	São Leopoldo	Brazil, São Leopoldo	0.2	2009				DRAM, MCP, NAND Flash	-
Honeywell Aerospace Technologies		USA, Redmond, Washington						MEMS
Microchip	Fab 4	United States, Oregon, Gresham	0.1835		200	110	30,000
Microchip	Fab 5	United States, Colorado, Colorado Springs			150	250	40,000	Domestic rad-hard MOSFET, silicon carbide, cryptography, hi-rel discretes, MEMS, automotive, analog, microcontrollers, and memory
Microchip	Lawrence	United States, Massachusetts, Lawrence			76.2 and 100	1,000	2,000

Number of open fabs currently listed here:

Closed plants

Number of closed fabs currently listed here: