X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors
X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors is a scholarly work, published in 2018 in ''IEEE Electron Device Letters''. The main subjects of the publication include materials science, transistor, field-effect transistor, optoelectronics, physics, linearity, Analytical Chemistry, figure of merit, gallium(III) oxide, and electrical engineering. The authors report on the power and linearity performance of metal organic chemical vapor deposition grown AlGaN channel polarization-graded field-effect transistor (PolFET).