Rzhanov Institute of Semiconductor Physics


Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS is a research institute in Akademgorodok of Novosibirsk, Russia. It was founded in 1964.
WWW isp.nsc.ruFB ispsbrasYT ispsbras

History

The institute was created in 1964 by merging the Institute of Solid State Physics and Semiconductor Electronics and the Institute of Radiophysics and Electronics. In the 1970s, the institute began to work on developing molecular-beam epitaxy methods.

Scientific activity

Development of the physical fundamentals of microelectronics, acousto-electronics, microphotoelectronics, quantum electronics; the study of physical phenomena in semiconductor thin-film structures etc.