Nonvolatile Memory with Multilevel Switching: A Basic Model
Nonvolatile Memory with Multilevel Switching: A Basic Model is a scholarly work by Isao H. Inoue and Maria Jose Sanchez, published in 2004 in ''Physical Review Letters''. The main subjects of the publication include ferroelectric random-access memory, resistive random-access memory, materials science, electronic engineering, semiconductor, optoelectronics, magnetic refrigeration, lock, computer science, non-volatile memory, memristor, -, and voltage. The authors introduce here an initial model for RRAM with the assumption that the semiconducting part has a nonpercolating domain structure.