High-Mobility IGZO TFTs by Infrared Radiation Activated Low-Temperature Solution Process
High-Mobility IGZO TFTs by Infrared Radiation Activated Low-Temperature Solution Process is a scholarly work, published in 2018 in ''IEEE Electron Device Letters''. The main subjects of the publication include plasmonics, impurity, physics, optoelectronics, Analytical Chemistry, materials science, smart glass, and infrared radiation. This letter presents high-mobility thin-film transistors (TFTs) based on InGaZnO by a novel infrared (IR) radiation activated low-temperature solution process.