Hafnium dioxide etch-stop layer for phase-shifting masks
Hafnium dioxide etch-stop layer for phase-shifting masks is a scholarly work, published in 1993 in ''Journal of Vacuum Science & Technology B''. The main subjects of the publication include layer, anti-reflective coating, sputtering, optoelectronics, electron beam lithography, atomic layer deposition, silicon dioxide, zirconium dioxide, materials science, phase, and quartz. It has been found that the combination of SiO2 for the phase-shift layer and HfO2 for the etch-stop layer offers a unique combination of properties advantageous for the preparation of phase-shift masks.