New substances for atomic-layer deposition of silicon dioxide
New substances for atomic-layer deposition of silicon dioxide is a scholarly work, published in 1995 in ''Journal of Non-Crystalline Solids''. The main subjects of the publication include chemical engineering, layer, materials science, silicon, isocyanate, Layer by layer, Low-k dielectric, atomic layer deposition, silane, chemistry, deposition, and silicon dioxide. Based on the first result of the layer-by-layer deposition of silicon dioxide films by a cyclic exposure of water and tetra isocyanate silane, Si(NCO)4, new isocyanate compounds preferable to Si(NCO)4 have been proposed for ideal layer-by-layer deposition characteristics.