Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits is a scholarly work, published in 2019 in ''IEEE Transactions on Very Large Scale Integration Systems''. The main subjects of the publication include logic gate, transistor, electronic circuit, electronic engineering, non-volatile memory, atomic layer deposition, ferroelectric random-access memory, resistive random-access memory, CMOS, materials science, computer science, and electrical engineering. The authors exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits.