Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon
Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon is a scholarly work, published in 2018 in ''Physical Review X''. The main subjects of the publication include optics, optoelectronics, Raman laser, laser, atomic physics, X-ray Raman scattering, Raman spectroscopy, stimulated emission, physics, excited state, dopant, doping, Lasing threshold, slow light, Raman scattering, materials science, population inversion, population, silicon, and silicon photonics. The authors report on an optically pumped laser where photons are simultaneously generated by Population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (Si∶Bi).