Reactive ion etching of RuO2 thin films using the gas mixture O2/CF3CFH2
Reactive ion etching of RuO2 thin films using the gas mixture O2/CF3CFH2 is a scholarly work, published in 1994 in ''Journal of Vacuum Science & Technology B''. The main subjects of the publication include composite material, X-ray photoelectron spectroscopy, Reactive-ion etching, atomic layer deposition, lead zirconate titanate, Analytical Chemistry, plasma, etching, chemical engineering, materials science, and thin film. RuO2 thin films were successfully patterned by the reactive ion etching technique in O2/CF3CFH2 using SiO2 films as etch masks.