Potential Modeling of Oxide Engineered Doping-Less Dual-Material-Double-Gate Si–Ge MOSFET and Its Application
Potential Modeling of Oxide Engineered Doping-Less Dual-Material-Double-Gate Si–Ge MOSFET and Its Application is a scholarly work, published in 2018 in ''Journal of Nanoelectronics and Optoelectronics''. The main subjects of the publication include doping, MOSFET, optoelectronics, nanotechnology, oxide, engineering physics, Schottky barrier, atomic layer deposition, nanoelectronics, materials science, dual, and gate oxide.