Low-energy electron microscopy of semiconductor surfaces
Low-energy electron microscopy of semiconductor surfaces is a scholarly work, published in 1991 in ''Journal of Vacuum Science & Technology A''. The main subjects of the publication include crystallography, silicon, impurity, Surface weather analysis, nanotechnology, Schottky barrier, semiconductor, transition metal, sublimation, Low-energy electron microscopy, electron microscope, materials science, chemical physics, and condensed matter physics. The low-energy electron microscopy work on the structure and dynamics of semiconductor surfaces, in particular of Si(111) and Si(100) is reviewed.