High-power UV InGaN/AlGaN double-heterostructure LEDs
High-power UV InGaN/AlGaN double-heterostructure LEDs is a scholarly work, published in 1998 in ''Journal of Crystal Growth''. The main subjects of the publication include photocathode, layer, light-emitting diode, quantum well, ultraviolet radiation, materials science, wide bandgap semiconductors, diode, optoelectronics, gallium(III) oxide, Active layer, quantum efficiency, Double heterostructure, and heterojunction. Ultraviolet (UV) InGaN/AlGaN double-heterostructure (DH) light-emitting diodes (LEDs) with an external quantum efficiency of 7.5%, an output power of 5 mW and an emission wavelength of 371 nm were developed.