Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress is a scholarly work, published in 2018 in ''Microelectronics Reliability''. The main subjects of the publication include power, quantum dot, optoelectronics, Pulsed power, light-emitting diode, diode, atomic layer deposition, stress, electroluminescence, current, voltage, materials science, and electrical engineering. The work presents the analysis of the degradation mechanisms and of the electro-optical characteristics of light emitting diodes (LEDs) submitted to electrical overstress.