Effect of zero bias, 2.7 MeV proton irradiation on HfO2
Effect of zero bias, 2.7 MeV proton irradiation on HfO2 is a scholarly work, published in 2018 in ''Journal of Radioanalytical and Nuclear Chemistry''. The main subjects of the publication include optoelectronics, memristor, capacitance, aquarium substrate, atomic physics, proton, ionizing radiation, irradiation, nanoelectronics, atomic layer deposition, voltage, semiconductor, materials science, silicon, oxide, capacitor, conductance, Analytical Chemistry, and radiation. To directly measure interface charge and to evaluate its change with the ionizing doses, capacitance–voltage (C–V) and conductance–voltage (G–V) measurements are taken.