Defect Structure of GaAs Layers Implanted with Nitrogen Ions
Defect Structure of GaAs Layers Implanted with Nitrogen Ions is a scholarly work, published in 2018 in ''Technical Physics Letters''. The main subjects of the publication include ion, failure analysis, nitrogen, atomic layer deposition, Ion implantation, materials science, and secondary ion mass spectrometry. Structural defects formed in epitaxial GaAs layers as a result of 250-keV N+ ion implantation to doses within 5 × 1014–5 × 1016 cm–2 have been studied by the X-ray diffraction (XRD) and transmission electron microscopy techniques.