Monolithic active pixel sensor
A monolithic active pixel sensor is a type of CMOS active-pixel sensor optimized for detection of the ionizing radiation rather than the visible light. In MAPS, both the sensor and the readout electronics are integrated onto the same silicon substrate. The term monolithic is used to distinguish CMOS APS from hybrid pixel detectors in which the sensor and the readout electronics are on two different substrates, normally connected by bump-bonding.
MAPS-based detectors offer exceptional spatial resolution at low noise, power consumption, material budget, and cost. Their most significant application lies in high-energy physics experiments, particularly those that require coverage of large areas and moderate radiation hardness, such as the ALICE experiment at the CERN Large Hadron Collider.
History
MAPS technology was initially developed in the 1990s as an alternative to traditional charge-coupled devices and hybrid pixel sensors. Advances in CMOS fabrication allowed for the integration of particle detection and signal processing on a single chip, reducing complexity and power consumption, while significantly increasing the readout speed with respect to CCDs. The introduction of MAPS into particle physics was driven by the need for lightweight, high-resolution sensors capable of operating in high-radiation environments.A first sensor for HEP in a standard technology, the MIMOSA or Minimum Ionizing particle MOS Active pixel Sensor was developed by in standard 0.6 μm VLSI CMOS technology. This marked a series of MIMOSA chips, of which MIMOSA28, alias ULTIMATE chip, was used in STAR Heavy Flavor Tracker. A significant advancement was made by the Rutherford Appleton Laboratory in collaboration with TowerJazz semiconductor. This involved integrating complete CMOS circuitry within the pixel, which is crucial for more sophisticated readout methods. This process was instrumental in numerous subsequent developments, including the ALPIDE sensor used in the ALICE experiment, the first MAPS sensor with a sparse readout akin to hybrid sensors.
Operating principle
Referring to the cross-sectional view of a conventional monolithic active pixel sensor, the following layers are discernible, commencing from the bottom:- a highly doped silicon substrate, serving as a mechanical support.
- a thin p-type epitaxial layer, utilized as the sensitive volume.
- n-type and p-type implants on top of the epitaxial layer,
- metal layers employed for signal routing.
A charged particle traversing silicon experiences energy loss through ionization, generating electron–hole pairs along its path. Electrons originating from the epitaxial layer are confined within this region due to the disparity in doping levels, which imposes a potential barrier. Subsequently, these electrons diffuse thermally within the epitaxial layer until they encounter a depleted region, where, under the influence of the electric field, they drift towards the collection diode. Electrons generated within the p-wells or the substrate, which diffuse into the epitaxial layer, undergo the same process.
Signal formation in MAPS depends on the junction capacitance of the collection diode and the input capacitance of the in-pixel readout circuit. A charge collection discharges the capacitance thus causing a voltage drop, where Q is the amount of collected charge and C the total capacitance. To optimize the signal-to-noise ratio, the collection diode tends to be as small as possible to decrease the junction capacitance.
To enhance readout speed and decrease data throughput, MAPS readout circuitry typically incorporates in-pixel amplification and discrimination. This approach retains only the information about the particle's hit position, effectively discarding the energy information. For instance, the ALPIDE chip, featuring 1024 × 512 pixel matrix with hit/no-hit readout, was designed to operate at 100 kHz readout rate.