| Laser gain medium and type | Operation wavelength | Pump source | Applications and notes |
| Helium–neon laser | 632.8 nm | Electrical discharge | Interferometry, holography, spectroscopy, barcode scanning, alignment, optical demonstrations. |
| Argon laser | 454.6 nm, 488.0 nm, 514.5 nm | Electrical discharge | Retinal phototherapy, lithography, confocal microscopy, spectroscopy pumping other lasers. |
| Krypton laser | 416 nm, 530.9 nm, 568.2 nm, 647.1 nm, 676.4 nm, 752.5 nm, 799.3 nm | Electrical discharge | Scientific research, mixed with argon to create "white-light" lasers, light shows. |
| Xenon ion laser | Many lines throughout visible spectrum extending into the UV and IR | Electrical discharge | Scientific research. |
| Nitrogen laser | 337.1 nm | Electrical discharge | Pumping of dye lasers, measuring air pollution, scientific research. Nitrogen lasers can operate superradiantly. Amateur laser construction. See TEA laser. |
| Carbon dioxide laser | 10.6 μm, | Transverse or longitudinal electrical discharge | Material processing, surgery, dental laser, military lasers. |
| Carbon monoxide laser | 2.6 to 4 μm, 4.8 to 8.3 μm | Electrical discharge | Material processing, photoacoustic spectroscopy. |
| Excimer laser | 157 nm, 193.3 nm, 248 nm, 308 nm, 351 nm | Excimer recombination via electrical discharge | Ultraviolet lithography for semiconductor manufacturing, laser surgery, LASIK, scientific research. |
| Laser gain medium and type | Operation wavelength | Pump source | Applications and notes |
| Ruby laser | 694.3 nm | Flashlamp | Holography, tattoo removal. The first laser, invented by Theodore Maiman in May 1960. |
| Nd:YAG laser | 1.064 μm, | Flashlamp, laser diode | Material processing, rangefinding, laser target designation, surgery, tattoo removal, hair removal, research, pumping other lasers. One of the most common high-power lasers. Usually pulsed, dental laser |
| Nd:YAP laser | 1.0646 μm | Flashlamp, laser diode | Surgery, tattoo removal, hair removal, research, pumping other lasers |
| Nd:Cr:YAG laser | 1.064 μm, | solar radiation | Experimental production of nanopowders. |
| Er:YAG laser | 2.94 μm | Flashlamp, laser diode | Periodontal scaling, dental laser, skin resurfacing |
| Neodymium YLF solid-state laser | 1.047 and 1.053 μm | Flashlamp, laser diode | Mostly used for pulsed pumping of certain types of pulsed Ti:sapphire lasers, combined with frequency doubling. |
| Neodymium-doped yttrium orthovanadate laser | 1.064 μm | laser diode | Mostly used for continuous pumping of mode-locked Ti:sapphire or dye lasers, in combination with frequency doubling. Also used pulsed for marking and micromachining. A frequency doubled nd:YVO4 laser is also the normal way of making a green laser pointer. |
| Neodymium-doped yttrium calcium oxoborate Nd:YCa4O3 or simply Nd:YCOB | ~1.060 μm | laser diode | Nd:YCOB is a so-called "self-frequency doubling" or SFD laser material which is both capable of lasing and which has nonlinear characteristics suitable for second harmonic generation. Such materials have the potential to simplify the design of high brightness green lasers. |
| Neodymium glass laser | ~1.062 μm, ~1.054 μm | Flashlamp, laser diode | Used in extremely high-power, high-energy multiple beam systems for inertial confinement fusion. Nd:Glass lasers are usually frequency tripled to the third harmonic at 351 nm in laser fusion devices. |
| Titanium sapphire laser | 650-1100 nm | Other laser | Spectroscopy, LIDAR, research. This material is often used in highly-tunable mode-locked infrared lasers to produce ultrashort pulses and in amplifier lasers to produce ultrashort and ultra-intense pulses. |
| Thulium YAG laser | 2.0 μm | Laser diode | LIDAR. |
| Ytterbium YAG laser | 1.03 μm | Laser diode, flashlamp | Laser cooling, materials processing, ultrashort pulse research, multiphoton microscopy, LIDAR. |
| Ytterbium:2O3 laser | 1.03 μm | Laser diode | Ultrashort pulse research, |
| Ytterbium-doped glass laser | 1. μm | Laser diode | Fiber version is capable of producing several-kilowatt continuous power, having ~70-80% optical-to-optical and ~25% electrical-to-optical efficiency. Material processing: cutting, welding, marking; nonlinear fiber optics: broadband fiber-nonlinearity based sources, pump for fiber Raman lasers; distributed Raman amplification pump for telecommunications. |
| Holmium YAG laser | 2.1 μm | Flashlamp, laser diode | Tissue ablation, kidney stone removal, dentistry. |
| Chromium ZnSe laser | 2.2 - 2.8 μm | Other laser | MWIR laser radar, countermeasure against heat-seeking missiles etc. |
| Cerium-doped lithium strontium aluminum fluoride | ~280 to 316 nm | Frequency quadrupled Nd:YAG laser pumped, excimer laser pumped, copper vapor laser pumped. | Remote atmospheric sensing, LIDAR, optics research. |
| Promethium-147-doped phosphate glass solid-state laser | 933 nm, 1098 nm | ?? | Laser material is radioactive. Once demonstrated in use at LLNL in 1987, room temperature 4 level lasing in 147Pm doped into a lead-indium-phosphate glass étalon. |
| Chromium-doped chrysoberyl laser | Typically tuned in the range of 700 to 820 nm | Flashlamp, laser diode, mercury arc | Dermatological uses, LIDAR, laser machining. |
| Erbium-ytterbium and Erbium-doped glass lasers | 1.53–1.56 μm | Flashlamp, laser diode | Erbium-ytterbium and erbium-doped glass lasers are made in rod, plate/chip, and optical fiber form. Common uses for Er:glass lasers include rangefinding and skin resurfacing. Erbium doped fibers are commonly used as optical amplifiers for telecommunications. |
| Trivalent uranium-doped calcium fluoride solid-state laser | 2.5 μm | Flashlamp | First 4-level solid state laser developed by Peter Sorokin and Mirek Stevenson at IBM research labs, second laser invented overall, liquid helium cooled, unused today. |
| Divalent samarium-doped calcium fluoride laser | 708.5 nm | Flashlamp | Also invented by Peter Sorokin and Mirek Stevenson at IBM research labs, early 1961. Liquid helium-cooled, unused today. |
| F-center laser | 2.3-3.3 μm | Ion laser | Spectroscopy |
| Optically pumped semiconductor laser | 920 nm-1.35 μm | Laser diode | Projection, life sciences, forensic analysis, spectroscopy, eye surgery, laser light shows. The lasing medium is a semiconductor chip. Frequency doubling or tripling is typically done to produce visible or ultraviolet radiation. Power levels of several watts are possible. Beam quality can be extremely high- often rivaling that of an ion laser. |
| Laser gain medium and type | Operation wavelength | Pump source | Applications and notes |
| Semiconductor laser diode | 0.4-20 μm, depending on active region material. | Electrical current | Telecommunications, holography, printing, weapons, machining, welding, pump sources for other lasers, high-beam headlights for automobiles. |
| GaN | 0.4 μm | Electrical current | Optical discs. 405 nm is used in Blu-ray Discs reading/recording. |
| InGaN | 0.4 - 0.5 μm | Electrical current | Home projector, primary light source for some recent small projectors |
| AlGaInP, AlGaAs | 0.63-0.9 μm | Electrical current | Optical discs, laser pointers, data communications. 780 nm compact disc, 650 nm general DVD player and 635 nm DVD for Authoring recorder laser are the most common lasers type in the world. Solid-state laser pumping, machining, medical. |
| InGaAsP | 1.0-2.1 μm | Electrical current | Telecommunications, solid-state laser pumping, machining, medical.. |
| lead salt | 3-20 μm | Electrical current | |
| Vertical-cavity surface-emitting laser | 850–1500 nm, depending on material | Electrical current | Telecommunications |
| Quantum cascade laser | Mid-infrared to far-infrared. | Electrical current | Research, Future applications may include collision-avoidance radar, industrial-process control and medical diagnostics such as breath analyzers. |
| Quantum dot laser | wide range. | Electrical current | Medicine, display technologies, spectroscopy and telecommunications. |
| Quantum well laser | 0.4-20 μm, depending on active region material. | Electrical current | Telecommunications |
| Hybrid silicon laser | Mid-infrared | Electrical current | Low cost silicon integrated optical communications |